SQD50N04-4M1 www.vishay.com vishay siliconix s12-0567-rev. a, 26-mar-12 1 document number: 63754 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 automotive n-channel 40 v (d-s) 175 c mosfet features ?trenchfet ? power mosfet ? package with low thermal resistance ? aec-q101 qualified d ?100 % r g and uis tested ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 notes a. package limited. b. pulse test; pulse width ? 300 s, duty cycle ? 2 %. c. when mounted on 1" squa re pcb (fr-4 material). d. parametric verification ongoing. product summary v ds (v) 40 r ds(on) ( ? ) at v gs = 10 v 0.0041 i d (a) 50 configuration single to-252 drain connected to tab top view g d s n-channel mosfet g d s ordering information package to-252 lead (pb)-free and halo gen-free SQD50N04-4M1-ge3 absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 40 v gate-source voltage v gs 20 continuous drain current a t c = 25 c i d 50 a t c = 125 c 50 continuous source curr ent (diode conduction) a i s 50 pulsed drain current b i dm 200 single pulse avalanche current l = 0.1 mh i as 62 single pulse avalanche energy e as 192 mj maximum power dissipation b t c = 25 c p d 136 w t c = 125 c 45 operating junction and storage temperature range t j , t stg - 55 to + 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount c r thja 50 c/w junction-to-case (drain) r thjc 1.1
SQD50N04-4M1 www.vishay.com vishay siliconix s12-0567-rev. a, 26-mar-12 2 document number: 63754 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design , not subject to production testing. c. independent of operating temperature. stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operatio nal sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. specifications (t c = 25 c, unless otherwise noted) parameter symbol test condi tions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 40 - - v gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.5 - 3.5 gate-source leakage i gss v ds = 0 v, v gs = 20 v - - 100 na zero gate voltage drain current i dss v gs = 0 v v ds = 40 v - - 1 a v gs = 0 v v ds = 40 v, t j = 125 c - - 50 v gs = 0 v v ds = 40 v, t j = 175 c - - 150 on-state drain current a i d(on) v gs = 10 v v ds ??? 5 v 50 - - a drain-source on-state resistance a r ds(on) v gs = 10 v i d = 20 a - 0.0030 0.0041 ? v gs = 10 v i d = 20 a, t j = 125 c - - 0.0068 v gs = 10 v i d = 20 a, t j = 175 c - - 0.0082 forward transconductance b g fs v ds = 15 v, i d = 15 a - 120 - s dynamic b input capacitance c iss v gs = 0 v v ds = 25 v, f = 1 mhz - 5360 6700 pf output capacitance c oss - 500 627 reverse transfer capacitance c rss - 250 310 total gate charge c q g v gs = 10 v v ds = 20 v, i d = 50 a - 70 105 nc gate-source charge c q gs -16- gate-drain charge c q gd -13- gate resistance r g f = 1 mhz 0.9 1.9 2.9 ? turn-on delay time c t d(on) v dd = 20 v, r l = 0.4 ? i d ? 50 a, v gen = 10 v, r g = 1 ? -1116 ns rise time c t r -58 turn-off delay time c t d(off) -3451 fall time c t f -914 source-drain diode ratings and characteristics b pulsed current a i sm - - 200 a forward voltage v sd i f = 30 a, v gs = 0 v - 0.9 1.5 v
SQD50N04-4M1 www.vishay.com vishay siliconix s12-0567-rev. a, 26-mar-12 3 document number: 63754 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) output characteristics transconductance capacitance transfer characteristics on-resistance vs. drain current gate charge 0 20 40 60 80 100 0 3 6 9 12 15 v gs =10vthru5v v gs =4v v d s - drain-to- s ource voltage (v) i d - drain current (a) 0 70 140 210 280 350 0 14 28 42 56 70 g fs - transconductance (s) i d - drain current (a) t c = 125 c t c = - 55 c t c = 25 c c r ss 0 1000 2000 3000 4000 5000 6000 7000 010203040 c i ss c o ss v d s - drain-to- s ource voltage (v) c - capacitance (pf) 0 20 40 60 80 100 0246810 t c = - 55 c t c = 125 c t c = 25 c v gs - g ate-to- s ource voltage (v) i d - drain current (a) 0.000 0.002 0.004 0.006 0.008 0.010 0 20 40 60 80 100 i d - drain current (a) v gs = 10 v r ds(on) - resistance ( ) 0 2 4 6 8 10 0 102030405060708090 i d =50a v d s =20v q g - total g ate charge (nc) v gs - g ate-to- s ource voltage (v)
SQD50N04-4M1 www.vishay.com vishay siliconix s12-0567-rev. a, 26-mar-12 4 document number: 63754 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage source drain diod e forward voltage threshold voltage drain source breakdown vs . junction temperature 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 175 i d =20a v gs =10v v gs =6v t j - junction temperature (c) (normalized) r d s (on) - on-re s i s tance 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0 2 4 6 8 10 v gs - gate-to-source v oltage ( v ) t j = 150 c t j = 25 c r ds(on) - resistance ( ) 0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0.001 0.1 10 100 t j = 25 c t j = 150 c v s d - s ource-to-drain voltage (v) i s - s ource current (a) - 1.8 - 1.3 - 0.8 - 0.3 0.2 0.7 - 50 - 25 0 25 50 75 100 125 150 175 i d =5ma i d = 250 a v gs (th) variance (v) t j - temperature (c) 42 44 46 48 50 52 54 - 50 - 25 0 25 50 75 100 125 150 175 i d =10ma t j - junction temperature (c) v d s - drain-to- s ource voltage (v)
SQD50N04-4M1 www.vishay.com vishay siliconix s12-0567-rev. a, 26-mar-12 5 document number: 63754 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings (t a = 25 c, unless otherwise noted) safe operating area normalized thermal transient impedance, junction-to-ambient 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 i d - drain current (a) v ds - drain-to-source v oltage ( v ) * v gs > minimum v gs at w hich r ds(on) is specified limited b y r ds(on) * 1 ms i dm limited t c = 25 c single pulse b v dss limited 100 s 10 ms, 100 ms, 1 s, 10 s, dc i d limited sq u are wave p u lse d u ration (s) 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 10 n ormalized eff ective transient thermal impedance 1000 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 100 1
SQD50N04-4M1 www.vishay.com vishay siliconix s12-0567-rev. a, 26-mar-12 6 document number: 63754 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings (t a = 25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-case note ? the characteristics shown in the two graphs - normalized transient thermal impedance junction-to-ambient (25 c) - normalized transient thermal im pedance junction-to-case (25 c) are given for general guidelines only to enable the user to get a ball park indication of part capabilities. the data are ext racted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. the latter is valid for the part mounted on printed circ uit board - fr4, size 1" x 1" x 0. 062", double sided with 2 oz. copper, 100 % on both sides. the part ca pabilities can widely vary depending on actual application parameters and operating conditions. vishay siliconix maintains worldwide manufactu ring capability. products may be manufact ured at one of seve ral qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63754 . sq u are wave p u lse d u ration (s) 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 10 n ormalized eff ective transient thermal impedance 100 0.2 0.1 d u ty cycle = 0.5 1 0.02 0.05 single p u lse
document number: 71197 www.vishay.com 18-apr-11 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package information vishay siliconix to-252aa case outline note ? dimension l3 is for reference only. l2 d l1 l3 b b1 e1 e1 d1 a1 c a2 gage plane height (0.5 mm) e b2 e c1 a l h millimeters inches dim. min. max. min. max. a 2.21 2.38 0.087 0.094 a1 0.89 1.14 0.035 0.045 a2 0.030 0.127 0.001 0.005 b 0.71 0.88 0.028 0.035 b1 0.76 1.14 0.030 0.045 b2 5.23 5.44 0.206 0.214 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 d 5.97 6.22 0.235 0.245 d1 4.10 4.45 0.161 0.175 e 6.48 6.73 0.255 0.265 e1 4.49 5.50 0.177 0.217 e 2.28 bsc 0.090 bsc e1 4.57 bsc 0.180 bsc h 9.65 10.41 0.380 0.410 l 1.40 1.78 0.055 0.070 l1 0.64 1.02 0.025 0.040 l2 0.89 1.27 0.035 0.050 l3 1.15 1.52 0.040 0.060 ecn: t11-0110-rev. l, 18-apr-11 dwg: 5347
application note 826 vishay siliconix document number: 72594 www.vishay.com revision: 21-jan-08 3 application note recommended minimum pads for dpak (to-252) 0.420 (10.668) recommended mi nimum pads dimensions in inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) return to index return to index
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